Study of photoluminescence in porous silicon prepared by electrochemical etching of amorphous silicon

We have prepared porous silicon (PS) by electrochemical etching of undoped amorphous silicon alloy layers grown by Plasma Enhanced Chemical Vapour Deposition under different deposition conditions. The PS exhibits photoluminescence (PL) and the emission energy depends on the preparation conditions. We find that the PL degrades with time and improves with annealing.