硫化温度和时间对Sn(下标 x)S(下标 y)薄膜结构和成分的影响

Sn(subscript x)S(subscript y) thin films had been prepared by a two-step process. This process included the deposition of Sn thin films on glass substrates by thermal evaporation and sulphurization of Sn thin films for 30~60 min in a vacuum condition at different temperatures of 150~300 ℃. Their microstructures, composition and morphology at different sulphurization temperatures and time were analyzed. The results showed: there were some differences in phase structure, composition and morphology for the films synthesized at different sulphurization temperatures and time; the films sulphurized at a temperature of 240℃ for 45min were polycrystalline SnS films with orthorhombic structure. The SnS films had a strong (111) preferred orientation and good adhesion to the substrates. They were uniform and their grain size was about 200~800 nm. The crystal lattice constant of the films was in good agreement with that of the standard sample.