UMEM based 1/f noise model for amorphous ESL IGZO TFTs

This work presents a physics-based model for the flicker (1/f) noise behavior of bottom-gated amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) with an Edge-Stop Layer (ESL). The model is derived based on the so-called Unified Method and Extraction Procedure (UMEM), a technique previously used in accurate device parameter extraction and simulation of current-voltage (I-V) characteristics of the amorphous hydrogenated Silicon (a-Si:H), polycrystalline Silicon (poly-Si), and Organic TFT (OTFT) devices. It has been reported that 1/f noise in the bottom-gated a-IGZO TFT with ESL and with a very thin film IGZO layer obeys the carrier number fluctuation theory. The unified 1/f noise model is, therefore, adapted here to take into account the correlated bulk mobility fluctuation as well. Excellent agreements of the model with measured DC and flicker noise characteristics have shown the model validation.