INVESTIGATION OF GaAsxP1-x ALLOYS FOR HIGH SPEED CURRENT LIMITING DEVICES.
1969
Abstract : The GaAsxP1-x single crystals used in the devices were grown by a vapor phase epitaxial technique. A brief description is presented and contact preparation is also described. The relative advantages and disadvantages of sandwich-like and planar-like structures are discussed, with emphasis on the differential resistance expected in the saturation range. The effects of temperature on diode characteristics are considered. Resistivity, mobility, Hall-coefficient, photoresistivity, and photo-Hall measurements are reported for crystals of alloy compositions near x = 0.70. Conclusions resulting from the experiments and plans for further research are discussed.
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