Calculation of one correlation characteristic of an electroencephalogram and its relationship of short-term memory capacity

The change in the electrophysical properties of molybdenum disilicide-silicon contacts by pulsed overloads is investigated. It is shown that for optimum pulse parameters an improvement occurs in the electrophysical properties of the contact structure. It is shown that its observed effects may be attributable to the rearrangement of the interface. A qualitative result is obtained making it possible to assume that the change in the interface properties is caused by the excitation of an electron subsystem