Investigation of high- and low-κ Gate dielectrics in tuning of graphene-loaded THz antennas

The effect of low- and high- κ gate dielectrics and their thickness on tuning of graphene-loaded THz antennas are studied. According to our study, SiO 2 provides higher tuning range for a resonance frequency as compared to Al 2 O 3 . For the particular antenna considered in this study, as thickness of SiO 2 is decreased tuning range changed between 190 to 320 GHz. This amount for Al 2 O 3 is 190 to 220 GHz. Based on our results, decreasing the thickness of SiO 2 can increase the bandwidth more than 68 percent. Thickness variation of Al 2 O 3 could enhance bandwidth around 17 percent. In both gate dielectrics, higher parallel resonance frequency is achieved by lower dielectric thickness.