Determination of ultratrace metallic impuritiesin polysilane and siloxane polymers for microelectronic devices
2001
Ultratrace metallic elements in polysilane, siloxane and other
such organic silicon compounds used in the fabrication of semiconductor devices
are determined so as to understand their effects on the devices. Separating
organic silicon by means of hydrolysis to SiO2 is a high sensitivity
analysis. The established procedures involve dissolution of organic silicon
compounds and the hydrolyzed products of organic silicon samples in hydrofluoric
acid-containing reagents followed by evaporation of the silicon matrix as
H2SiF6. The residual metallic elements in the treated
sample solution were then determined by electrothermal atomic absorption spectrometry (ETAAS).
The results indicated that a small amount of sulfuric acid was helpful in
yielding SiO2 from organic silicon compounds, and that proper controls
of the evaporation process are effective in preventing chemical interferences
of some metallic elements during recovery and reproducible analysis. The methods
developed were applied to the determination of metallic elements such as sodium,
iron, and copper in various kinds of organic silicon compounds used for microelectronic
devices. The limit of detection for seven metallic elements was as low as
0.1 ng g−1 levels.
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