SOI photodiode array stacked on VDMOS for optical switching
1987
This paper describes the first development of the single chip optical switching device for optical coupling MOS relay by SOI technology. The device is constructed with a laser recrystailized SOI layer as a photoelectric element, which is fabricated in the upper layer in the device and shades the power MOSFET fabricated in the lower layer. On illuminating the device, the power MOSFET can be switched on Accordingly, an optical switching MOSFET with the function of a photodiode and a MOSFET is realized as a single chip device.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
4
References
4
Citations
NaN
KQI