Effective surface passivation of In0.53Ga0.47As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study

Abstract Molecular-beam-epitaxy (MBE) and atomic-layer-deposition (ALD) high-κ HfO 2 dielectrics have been in - situ deposited on MBE-grown pristine p - and n -In 0.53 Ga 0.47 As(0 0 1). The HfO 2 /In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOSCAPs) from both methods all exhibit excellent capacitance-voltage ( C - V ) characteristics with true inversion and low leakage current densities. Moreover, interfacial trap densities ( D it ’s) with no discernible peaks at the mid-gap were measured using the temperature-dependent conductance method. Both HfO 2 /InGaAs hetero-structures have exhibited outstanding thermal stabilities to 800 °C.