A calculation of defect gap states on the clean (110) surfaces of some III–V semiconductors

Abstract The gap electronic structure of various defects on the (110) faces of GaSb, GaAs, GaP, InAs and InP is studied. States associated with defects having one or two dangling bonds on either metallic and non-metallic atoms are considered. For interacting defects the barycenter of the states is calculated and their splitting is estimated. It is found that for GaSb, GaAs, GaP and InAs only two clearly distinct groups of levels can be identified. The upper one always corresponds to centers with one dangling bond on a metallic atom, while the lower one contains the levels associated to all the other possibilities we have investigated. For InP, levels associated with two dangling bonds on a metallic atom are raised from the lower group. This is in agreement with the other available theoretical results. A discussion of the experimental data in the light of our results is presented.