Luminescence from Nd- and Dy-ion-implanted 4H–SiC

Cathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4H–SiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after rapid thermal annealing at 1500°C followed by thermal oxidations at 860°C for 720min. On the other hand, near infrared PL is observed only from Nd-implanted 4H–SiC without thermal oxidation. It is found from the CL spectra observed after thermal oxidation that the ligand field effects on Nd3+ are strong, while those on Dy3+ are weak.