Et3GeN(SiMe3)2 and Et3SnN(SiMe3)2: New precursors for chemical vapor deposition processes

We have synthesized the germanium- and tin-containing organosilicon compounds Et3GeN(SiMe3)2 and Et3SnN(SiMe3)2 as new precursors for the preparation of materials by chemical vapor deposition. The compounds were characterized by NMR, IR and UV spectroscopies and thermal analysis. Using vapor pressure measurements, we obtained temperature dependences of their saturated vapor pressure. We assessed their thermal stability and calculated the thermodynamic characteristics of vaporization of the organosilicon compounds.