Old Web
English
Sign In
Acemap
>
Paper
>
C 2 F 6 / O 2 and C 3 F 8 / O 2 Plasmas SiO2 Etch Rates, Impedance Analysis, and Discharge Emissions
C 2 F 6 / O 2 and C 3 F 8 / O 2 Plasmas SiO2 Etch Rates, Impedance Analysis, and Discharge Emissions
1999
William Robert Entley
William J. Hennessy
John Giles Langan
Keywords:
Plasma
Inorganic chemistry
Materials science
Electrical impedance
Analytical chemistry
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
14
Citations
NaN
KQI
[]