Old Web
English
Sign In
Acemap
>
Paper
>
Formation of SGOI Structures with Low Dislocation Density by Two Step Oxidation and Condensation Method
Formation of SGOI Structures with Low Dislocation Density by Two Step Oxidation and Condensation Method
2006
Sugiyama
Nakaharai
Hirashita
Tezuka
Moriyama
Usuda
Takagi
Keywords:
Silicon on insulator
Materials science
MOSFET
Dislocation
Condensed matter physics
Condensation
two step
Correction
Source
Cite
Save
Machine Reading By IdeaReader
5
References
0
Citations
NaN
KQI
[]