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Performance of La 2 O 3 /InAlN/GaN metal oxide semiconductor high electron mobility transistors
Performance of La 2 O 3 /InAlN/GaN metal oxide semiconductor high electron mobility transistors
2012
Feng Qian
Li Qian
Xing Tao
Wang Qiang
Zhang Jincheng
Hao Yue
Keywords:
Electron mobility
Oxide
Transistor
Semiconductor
Metal
Inorganic chemistry
Materials science
high electron
Optoelectronics
oxide semiconductor
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