InGaAs/InGaAsP/InP Edge Emitting Laser Diodes on p-GaAs Substrates Obtained by Localised Wafer Fusion
1997
The authors present low voltage barrier p-InP/p-GaAs junctions obtained by localised fusion which facilitates a better evacuation of absorbed gases and native oxides from the fused interface. Using this approach InGaAs/lnGaAsP/InP edge emitting lasers fused to p-GaAs were realised for the first time, showing better parameters than as-grown diodes. The presented results prove that localised fusion is a suitable tool for achieving additional lateral current confinement, which may be important for a wide variety of other device applications.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
12
References
24
Citations
NaN
KQI