Boron induced recrystallization of amorphous silicon film by a rapid thermal process

Abstract Rapid thermal process (RTP) is to induce boron-doped amorphous silicon into a high degree of crystallization of polycrystalline silicon in 5 min. In addition to the short time characteristic, it also provides a relatively lower temperature route to prepare high percentage of polycrystalline silicon in comparison with solid phase crystallization method. Before RTP, boron is homogeneously doped into the amorphous silicon film by ion implantation technology. After rapid thermal processing, the grain size of the polycrystalline silicon was found about at 0.1–0.5 μm. The degree crystallization of silicon is reached up to 99.1% with a good hole mobility of 138.6 cm²/V s.