A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs.Different short channel field effects,such as fringing fields,junction-induced lateral fields and substrate fields,are carefully investigated,and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model.Through analytical model-based simulation,the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations.Results of analytical simulation are compared with the results of the ATLAS 2D physics-based simulator for verification of the analytical model.The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET.The short channel effects are found to be reduced in an SON,thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold slope.This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices.