Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs
2021
We investigated and demonstrated a 1.3 μm band laser grown by metalorganic vapor-phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic-graded InxGa1–xAs buffer and epitaxial structu...
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