Heteroepitaxial Growth of Si ON ZrO2-Y2O3/Si

Silicon films were grown on epitaxial (ZrO2)1s-x(Y2O3). films on the Si substrate. The deposition of Si was carried out by conventional plasmas-CVD of the mixture of SiH4, H2 and PH3 gases. The appropriate deposition conditions for the epitaxial growth of Si were examined. The crystallographic properties of the Si films were characterized by reflection highs-energy electron diffraction (RHEED).