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Normally-Off AlGaN/GaN Mos-Hemts Using ZrO2 Gate Dielectric with Tuneable Charge
Normally-Off AlGaN/GaN Mos-Hemts Using ZrO2 Gate Dielectric with Tuneable Charge
2017
Travis J. Anderson
Virginia D. Wheeler
David I. Shahin
Marko J. Tadjer
Lunet E. Luna
Andrew D. Koehler
Karl D. Hobart
Francis J. Kub
Charles R. Eddy
Keywords:
Gate dielectric
Electronic engineering
Engineering
Optoelectronics
algan gan
Electrical engineering
normally off
Correction
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