A process for producing an epitaxial layer for increased drain and source regions by removing contaminants

A method comprising: Forming doped regions with a specified doping profile in a silicon region adjacent to a gate electrode having sidewall spacers formed thereon; Determining a depth of penetration of contaminants into a surface layer of the doped regions; Removing the contaminated surface layer of the doped regions by performing an etching process using a dilute etchant; and epitaxially growing a silicon layer on the doped regions after removal of the surface layer.