8-bit semiconductor memory cell, the memory cell array and its manufacturing method

The present invention provides an 8-bit unit, and a method of forming a semiconductor memory, the memory cell array. 8-bit semiconductor memory cell comprises a source region, a drain region four, four gate region, four and eight strip-shaped semiconductor fin composite charge storage layer; wherein four symmetrically on the outside of the source-drain set, and each of the drain and source is provided with a strip-shaped semiconductor fin having a channel region between the source; four gates each provided between each two adjacent strip-shaped semiconductor fin, and the gate contact and the channel region between the sides of the gate by a semiconductor fin having a charge storage layer composite charge trapping layer. Therefore, with this new configuration, clever achieve 8-bit stored in the storage means, and further increase the storage density of the memory cell.