Process for preparing diamond-like coating doped with silicon element

The invention relates to a process for preparing a diamond-like coating doped with silicon element. The adopted equipment refers to physical vapor deposition equipment and a light discharge device. The process comprises the following steps: pretreating the surface of a workpiece, introducing argon into a vacuum furnace, and performing plasma cleaning on the workpiece; introducing nitrogen into the vacuum furnace chamber, taking Cr as a target, and depositing a CrN transition layer on the surface of the workpiece by adopting a physical vapor deposition technology; introducing acetylene and tetramethylsilane into the vacuum furnace, and preparing the diamond-like coating of which the top is doped with silicon element by virtue of a plasma glow discharge technology. The diamond-like coating is prepared by controlling the vacuum degree, substrate bias voltage, nitrogen flow, tetramethylsilane flow, acetylene flow and target current size. The prepared diamond-like coating doped with silicon element has the advantages of low deposition temperature (lower than 180 DEG C), high binding force, high hardness (Vickers hardness of more than HV2800), low friction coefficient (less than 0.05), corrosion resistance, oxidation resistance and the like.