Unified DeepSubmicron MOSFET Model for Circuit Simulation

In this paper, a new model for deep-submiaometer MOSFET is developed, which includes various secondorder physical effects in the operations of deepsubmicrometer MOSFET's. In the model, a unified formula is used to describe all the operation regions, which keeps the model C,-Continuous. The model is suitable for both digital and analog MOS circuit simulations. A good fitting has been achiked between the model and experiment data.