Infrared and Raman spectroscopy study of Si1−xGexO2 solid solutions with α-quartz structures

Abstract Single crystals of α-quartz-type Si1−xGexO2 (x  Ge O in the GeO4 tetrahedra (670, 930, 1010, 2125 cm−1), appeared, and the intensities of the absorption bands of O Si O in the SiO4 tetrahedra (263, 695, 2137, doublet at 2326 and 2333, 2499, 2599, 2673 cm−1) decreased. The shifts in the absorption bands at 354, 511, 2499 and 2673 cm−1 to lower wavenumbers linearly depends on the Ge content and are characteristic of vibrations in the Si O Ge chains. The origin of some combinational vibrations is also clarified. A combination vibration that caused the band at 1395 cm−1 was formed by vibrations with wavenumbers of 263 (type E) and 1170 cm−1 (type E). The bands at 2499 and 2673 cm−1 were composed of the band at 354 cm−1 and two vibrations at 1083 cm−1 (type E) and by two vibrations at 1170 cm−1 (type E), respectively.