Noise performance of Gate engineered double gate MOSFETs for analog and RF applications

Due to their excellent scalability and better immunity to short channel effects, Double gate MOSFETs rule the CMOS applications era. However for channel lengths below 100nm, DG MOSFETs still show considerable threshold voltage roll off and to overcome this, gate engineering technique can be widely used. In this paper, we systematically investigate the analog/RF and Noise performance of Gate engineered DG MOSFETs for System-on-chip applications. A very good improvement in noise parameters such as power spectral density and Noise figure are observed in case of DMDG devices compared to its single metal counterpart.