Numerical Simulation of Programming Transient Behavior in Charge Trapping Storage Memory

This work aims to develop an accurate programming transient model for a SONOS type memory cell. By considering (i) the current tunneling through bottom oxide from substrate, (ii) the capture/emission efficiency in nitride, and (iii) the out tunneling probability from top dielectric, an excellent consistency between experiments and simulations is observed across various programming voltages. The programming behavior under various combinations of storage materials and blocking layers are also well demonstrated by incorporating the band-gap difference. Finally, the penalty of widened programming V T distribution due to the thinning down of tunneling oxide is examined and clarified.