Radiation defects in GaP bombarded with 50 MeV electrons

E.Y. Brailovskii,G. N. Eritsyan,V.P. Tartachnik

Radiation defects in GaP bombarded with 50 MeV electrons

1975

E.Y. Brailovskii
G. N. Eritsyan
V.P. Tartachnik

50 MeV electrons were used to bombard n-type GaP. The generation and annealing of defects were studied by measurements of the electric conductivity and Hall effect. (AIP)

Keywords:

Annealing (metallurgy)
Atomic physics
Hall effect
Radiation
Electron
Crystallographic defect
Nuclear chemistry
Electrical resistivity and conductivity
Materials science
Condensed matter physics

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