Graphite materials and manufacturing method thereof

Excellent bonding between the semiconductor, heat can be efficiently dissipated to heat generated from the semiconductor to obtain a graphite material and a manufacturing method thereof having a high thermal conductivity. Silicon, zirconium, calcium, titanium, chromium, added manganese, iron, cobalt, nickel, calcium, yttrium, niobium, molybdenum, at least two types selected from compounds containing technetium and ruthenium element or elements thereof, to a heat treatment a graphite material obtained by, there is a thickness of 112 face of graphite crystal by X-ray diffraction is 15nm or more, X, Y, and three directions of the average thermal conductivity of the Z-axis is 250W / (m · K) it is characterized in that at least.