Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

In this work, vertical NiO/Ga 2 O 3 heterojunction diodes (HJDs) have been demonstrated with the integrated SiN x /Al 2 O 3 double-layered insulating field plate (FP) structure. With the optimal post annealing, the device performance has been improved with a decreased differential specific on-resistance (Ron,sp), a decreased reverse leakage current density and the elimination of double barrier behavior in forward bias condition, which is due to the reduced interface defects produced by the plasma damage of fabricated process. Our work provides an optimized way for the heterojunction devices based on Ga 2 O 3 material to solve the difficulty of p-type Ga 2 O 3 .