Two dimensional transient device simulator with deep trap model for compound semiconductor devices

A two-dimensional transient device simulator, BIUNAP-CT, for compound semiconductors is described. The main purpose of this simulator is to clarify deep trap effects on devices, in particular those for semi-insulating substrates. Heterojunction devices can also be treated. The simulator is based on the drift-diffusion model for electron and hole transports and Shockley-Read-Hall (SRH) statistics for deep traps. The finite differential method, Gummel's scheme, Mock's scheme, and the full implicit backward Euler method were adopted to solve the device equations. Examples of simulation results on GaAs MESFET side-gating effects in transient action are presented. Various drain current responses to side-gate voltage change were revealed. >