Semiconductive behavior of Sb doped SnO2 thin films

Sb doped Sn02 has been deposited on polished ceramic A1203 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been meas ured as a function of temperature. A model for the electrical properties of the films is proposed. Since Sb doped Sn02 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.