Investigation of High Temperature Photoluminescence Efficiency from InGaN/GaN MQWs

Abbas Sabbar,Syam Madliusoodlianan,Sattar Al-Kabi,Binzhong Dong,J. B. Wang,Shui-Qing Yu,Zhong Chen

Investigation of High Temperature Photoluminescence Efficiency from InGaN/GaN MQWs

2018

Abbas Sabbar
Syam Madliusoodlianan
Sattar Al-Kabi
Binzhong Dong
J. B. Wang
Shui-Qing Yu
Zhong Chen

Temperature and power dependent photoluminescence (PL) measurements from InGaN/GaN MQWs, which was grown on a sapphire substrate were performed to extract the PL efficiency.

Keywords:

Physics
Light-emitting diode
Quantum well
Photoluminescence
Optics
Quantum efficiency
Sapphire
Analytical chemistry
laser beams
Temperature measurement
light intensity
laser light
sapphire substrate
Optoelectronics

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