Analytical study of high efficient Cu(In,Ga)Se 2 solar cell with In 2 S 3 buffer layer

This paper represents a lucid numerical analysis of thin film Cu(In,Ga)Se 2 (CIGS) solar cell with In 2 S 3 (Indium Sulphide) buffer layer by using SCAPS-1D. The effect of band gap, concentration and thickness of both Cu(In,Ga)Se 2 absorber layer and In 2 S 3 buffer layer are investigated in this simulation. This study is focused to analyze electrical performances of In 2 S 3 buffer layer based Cu(In,Ga)Se 2 solar cell for a better substitute of toxic CdS buffer layer. The optimum thickness has found 40 nm for In 2 S 3 buffer layer and 3000 nm for Cu(In,Ga)Se 2 absorber layer. In addition, the optimum band gap of CIGS and In 2 S 3 layer has attained 1.10 eV and 2.6 eV subsequently and 25.03% efficiency has achieved along with 0.75 V open circuit voltage (V oc ), 39.435 mA/cm 2 short circuit current density (J sc ) and 84.62% Fill Factor (FF).