Dopant redistribution in silicon‐on‐sapphire films during thermal annealing

Arsenic depth distributions in silicon‐on‐sapphire films, after annealing at 900 °C for a range of times, have been studied by Rutherford backscattering and spreading resistance techniques. A continuum pipe diffusion model is developed which accounts satisfactorily for the rapid diffusion and segregation effects observed. In addition, the same model predicts two‐dimensional dopant profiles with several novel features relevant to microelectronic device processing.