Tunnel Transistors for Low Power Logic

Tunnel transistor (TFET) as steep slope device to enable supply voltage scaling is explored at the device level as well as circuit level. Hetero-junction TFET is demonstrated with high drive current and high on-off current ratio. Hetero-junction TFETs with scaled device geometry outperform Si FINFET at Vcc <; 0.3V. Design considerations of TFET based circuits for logic applications are investigated and performance benchmarked with Si FinFET technology.