Influence of a hole inversion layer at the In2O3 / BiVO4 interface on the high-efficiency photocatalytic performance

Abstract Recently, Due to the importance of photocatalysts in different applications, numerous strategies have been studied to improve its performance. Herein, we refuge to create a built-in electric field by building the hole inversion layer at the interface layer between In2O3/BiVO4 composite as n-n heterojunction semiconductor. The results show an enhancement in photocatalytic activity due to the impact of spontaneous internal polarization. Photoelectrochemical properties confirmed a decrease in the quick recombination of photo-induced electrons (e−) and holes (h+). The bode curve also shows an enhancement in the charges transfer in the bulk of material and at interface layers. Mott-Schottky plots revealed an inversion layer created at the In2O3 ǀǀ BiVO4 interface that drives electrons and holes to transfer along with the opposite directions. This inversion layer converts the behavior of the composite to work as a virtual p-n heterojunction. These results enhance the composite's photo-activity to duplicate the degradation of Methylene blue (MB) dye.