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Investigation of Maximum Junction Temperature for 4H-SiC MOSFET During Unclamped Inductive Switching Test
Investigation of Maximum Junction Temperature for 4H-SiC MOSFET During Unclamped Inductive Switching Test
2018
Junjie An
Masaki Namai
Dai Okamoto
Hiroshi Yano
Hiroshi Tadano
Noriyuki Iwamuro
Keywords:
Electronic engineering
MOSFET
Computer science
Electrical engineering
Junction temperature
Correction
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