Reflectivity and Optical Brightness of Laser-Induced Shocks in Silicon

1998 
We report the first simultaneous measurement of the reflectivity and optical emission of a strong (4\char21{}8 Mbar) shock front emerging at a free surface of a solid. Planar shock waves were driven by thermal x rays from a laser-heated cavity. The inferred model-independent brightness temperature of the shock front in silicon turns out to be significantly below the expected Hugoniot temperature. We find that our data cannot be explained within the two-temperature model which assumes instantaneous metallization of silicon in the density jump.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    0
    References
    25
    Citations
    NaN
    KQI
    []