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HCl + GeH4 etching for the low temperature Cyclic Deposition/Etch of Si, Si:P, tensile-Si:P and SiGe(:B)
HCl + GeH4 etching for the low temperature Cyclic Deposition/Etch of Si, Si:P, tensile-Si:P and SiGe(:B)
2019
J.-M. Hartmann
M. Veillerot
Keywords:
Chemistry
Ultimate tensile strength
Deposition (law)
Analytical chemistry
Etching
Correction
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