Characterization & improvement of SNM in deep submicron SRAM design

This paper examines the characteristics of static noise margin (SNM) of 6T SRAM Cell. The existing architectures of SRAM are first investigated, and after that a suitable basic 6T SRAM structure is selected. An analysis of the impact of parameters viz Cell ratio (CR), Pull up ratio (PR) and Supply voltage (+V DD ) on the SNM was carried out with a view to optimizing the performance of SRAM cell. It has been observed that the SNM increases with the increasing value of CR. Similarly with increase in value of PR, an increase in SNM was observed. Finally, Body biasing technique has been used to improve the SNM of 6T SRAM cell in 28nm technology at 25°C.