Crystalline silicon nitride passivating the Si(111) surface : A study of the Au growth mode

Abstract The growth of gold on a silicon nitride thin film grown on a Si(1 1 1) surface was investigated by means of core-level and valence band photoelectron spectroscopy. After in situ thermal passivation by NH 3 of the silicon substrate, gold was deposited at room temperature. We followed the Si 2p and Au 4f core-levels as well as valence band spectra as a function of the gold coverage. The metal adsorbate follows the Volmer–Weber growth mode. The formation of a nonreactive and abrupt interface between the metal and insulator layer is clearly demonstrated.