Corrigendum to: “Synthesis of epitaxial graphene on rhodium from 3-pentanone” [Surf. Sci. 605 (2011) L17][1]

2014 
On page L18 in Ref. [1] we state: “If the atomic ratio (of a single layer and graphene, respectively. Assuming 1 monolayer of graphene, we get h-BN on Rh(111) as determined by XPS) (AB + AN) / ARh of 0.43 is normalized with the unit cell sizes of h-BN and graphene, respectively, we find (from the graphene atomic ratio (2AC) / ARh of 0.40) a carbon coverage that corresponds to 0.96 ± 0.05 layers of graphene.” This is not correct since the x-ray-photoemission spectroscopy (XPS) intensity of single layer h-BN and graphene is proportional to the emitter density, which is proportional to a−2, where a is the corresponding lattice constant of h-BN and graphene, respectively. With the values of ah − BN (2.5 A) and ag (2.46 A), we get 0.90± 0.05 “effective” layers of graphene instead of 0.96 layers. Since the reported scanning tunneling microscopy data indicate full graphene coverage, we propose that the difference between the above XPS and the STM result is related to different photoelectron attenuations across h-BN
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