Photodetector and a manufacturing method thereof according to a vertical metal-semiconductor microresonator

(57) Abstract: The method of manufacturing an optical detection device and the device comprises a vertical metal-semiconductor microresonator. According to the present invention, in order to detect the incident light, on the insulating layer 2 that does not absorb the light, and at least one element having a semiconductor material 6, and at least two electrodes 4 for holding the element It is formed. The element and the electrode unit is suitable to absorb the light, in particular, by causing the resonance of the surface plasmon mode between the boundary surface of the unit with the propagation medium and the insulating layer for the incident light It is configured to increase the intensity of the light to the incident light. Resonance in this mode takes place in the interface between the at least one with elements of the electrodes, the mode is excited by the magnetic field component of the light parallel to the electrode. The present invention can be utilized in optical communications.