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Impact Ionization and Bell-Shaped Gate Leakage at Room Temperature and 10 K in GaInAs/AlInAs pHEMTs on InP Substrates
Impact Ionization and Bell-Shaped Gate Leakage at Room Temperature and 10 K in GaInAs/AlInAs pHEMTs on InP Substrates
2010
A. R. Alt
Colombo R. Bolognesi
Keywords:
Impact ionization
Leakage (electronics)
Materials science
Optoelectronics
Correction
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