Growth of InP/InGaAs multiple quantum well structures by chemical beam epitaxy

Abstract InP/InGaAs multiple quantum well structures with up to 200 periods have been grown by CBE. These structures exhibit exceptional lateral uniformity, measured as ±1 A in period, ±13 ppm in lattice mismatch and ±0.5 nm in wavelength across a 2 inch wafer. Good surface morphology, sharp interfaces and excellent growth control have all been demonstrated.