Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga 2 O 3 thin film

This work was supported by the National Natural Science Foundation of China (Grant Nos.61774019, 51572033, and 51572241), the Beijing Municipal Commission of Science and Technology, China (Grant No. SX2018-04). In addition, the authors acknowledged the Fundamental Research Funds for the Central Universities and the Foundation of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts andTelecommunications).