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InGaN-based Light Emitting Diodes on (-201) β-Ga2O3 Substrate for Large-current Operation
InGaN-based Light Emitting Diodes on (-201) β-Ga2O3 Substrate for Large-current Operation
2014
Kazuyuki Iizuka
Keywords:
Light-emitting diode
Optoelectronics
Substrate (chemistry)
Materials science
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