Comparison of beam-induced deposition using ion microprobe

Abstract The localized Pt deposition on Si by 30 keV Ga + focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be 2+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from the center of processed areas partly redeposited at and nearby the FIB processed areas within ∼3 μm. The Ga incorporation by dual beam processing was reduced compared with that by FIB processing. The lateral distribution of low-Z elements such as C at and around the processed areas by about 10 μm is due to the adsorbed molecules of precursor gas during FIB processing.